1. Quantitative determination of oxygen in silicon by combination of FTIR-spectroscopy, inert gas fusion analysis and secondary ion mass spectroscopy;Stingeder;Fresenius Z. Anal. Chem.,1989
2. Test methods for determining interstitial oxygen content are covered by the following standards: SEMI MF951-0305 (2011), SEMI MF1188-1107 (2012), SEMI MF1619-1107 (2012), SEMI MF1366-0308 (2013). International SEMI Standards, .
3. SEMI MF1239-0305, Test method for oxygen precipitation characteristics of silicon wafers by measurement of interstitial oxygen reduction. International SEMI Standards, , 2011.
4. SEMI M44-00-0305 Guide to conversion factors for interstitial oxygen in silicon. International SEMI Standards, , 2011.
5. ASTM Standard F 47-94, Standard test method for crystallographic perfection of silicon by preferential etch techniques, in: 1996 Annual Book of ASTM Standards, Am. Soc. Test. Mat., West Conshohocken, PA, 1996.