Investigation of oxide particles in Czochralski silicon heat treated for intrinsic gettering using scanning infrared microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101956
Reference3 articles.
1. Infrared laser scanning microscopy in transmission: A new high‐resolution technique for the study of inhomogeneities in bulk GaAs
2. Formation of Nuclei of Oxygen Precipitates in CZ Silicon Crystals during Crystal Growth Process
3. Characterization of haze‐forming precipitates in silicon
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3. Formation of a denuded zone in nitrogen-doped Czochralski silicon wafer treated by ramping anneals;Semiconductor Science and Technology;2005-01-21
4. Applications of scanning optical microscopy in materials science to detect bulk microdefects in semiconductors;Journal of Microscopy;1997-10
5. Analysis of Local Lattice Strains Around Plate-Like Oxygen Precipitates in Czochralski-Silicon Wafers by Convergent-Beam Electron Diffraction;Japanese Journal of Applied Physics;1997-06-15
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