Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking Faults
2. Argon ion implantation gettering of large area p-n junctions and schottky diodes
3. Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2‐Si interface
4. Impact of copper contamination on the quality of silicon oxides
5. Influence of Metal Impurities on Leakage Current of Si N+P Diode
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