Chloromethane-based reactive ion etching of GaAs and InP
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=2/a=019/pdf
Reference10 articles.
1. Reactive ion etching of GaAs using a mixture of methane and hydrogen
2. Reactive ion etching of III-V compounds using C2H6/H2
3. Propane: hydrogen MORIE of GaAs
4. Dry etching of indium phosphide
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