Inductively coupled plasma etching of InP using N2/H2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365942
Reference37 articles.
1. Plasma separation of InGaAsP/InP light‐emitting diodes
2. Plasma etching of III–V compound semiconductor materials and their oxides
3. Directional reactive‐ion‐etching of InP with Cl2 containing gases
4. CCl4 and Cl2 Plasma Etching of III–V Semiconductors and the Role of Added O 2
5. Surface composition and etching of III‐V semiconductors in Cl2ion beams
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4. Room-Temperature Inductively Coupled Plasma Etching of InP Using Cl 2 /N 2 and Cl 2 /CH 4 /H 2;Chinese Physics Letters;2006-03-30
5. Study and optimization of room temperature inductively coupled plasma etching of InP using Cl2/CH4/H2 and CH4/H2;Journal of Crystal Growth;2006-02
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