Plasma separation of InGaAsP/InP light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91925
Reference5 articles.
1. Liquid phase epitaxial In1−xGaxAsyP1−ylattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
2. Ohmic contacts top‐type InP using Be‐Au metallization
3. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
4. Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers
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1. Microbubble-Triggered Spontaneous Separation of Transparent Thin Films from Substrates Using Evaporable Core–Shell Nanocapsules;ACS Applied Materials & Interfaces;2018-05-03
2. Inductively coupled plasma etching of InP using CH[sub 4]/H[sub 2] and CH[sub 4]/H[sub 2]/N[sub 2];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Inductively coupled plasma etching of InP using N2/H2;Journal of Applied Physics;2001-05-15
4. Dry Etching of InP Vias;Handbook of Advanced Plasma Processing Techniques;2000
5. Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application;Japanese Journal of Applied Physics;1998-02-15
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