Inductively coupled plasma etching of InP using CH[sub 4]/H[sub 2] and CH[sub 4]/H[sub 2]/N[sub 2]-Reference-Cited by-同舟云学术

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Inductively coupled plasma etching of InP using CH[sub 4]/H[sub 2] and CH[sub 4]/H[sub 2]/N[sub 2]

Published:2002 Issue:1 Volume:20 Page:47
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chen Hsin-Yi,Ruda Harry E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication;Materials Science in Semiconductor Processing;2023-11

2. The Impact of Manufacturing Imperfections on the Performance of Metalenses and a Manufacturing-Tolerant Design Method;Micromachines;2022-09-16

3. Mid-infrared quantum cascade laser waveguides with non-vertical sidewalls;Infrared Physics & Technology;2021-11

4. Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

5. CHANGES OF DIETARY FIBER IN ZIZANIA LATIFOLIA GALLS IN RESPONSE TO DIFFERENT FERTILIZERS;Acta Horticulturae;2008-01

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