Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells-Reference-Cited by-同舟云学术

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Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Published:2011-03-31 Issue:7 Volume:26 Page:075009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kang Ho Kwan,Park Sang-Hyuk,Jun Dong Hwan,Kim Chang Zoo,Song Keun Man,Park Wonkyu,Ko Chul Gi,Kim Hogyoung

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Measurement of true spontaneous emission spectra from the facet of diode laser structures

2. III–V compound multi-junction solar cells: present and future

3. Te doping of GaAs using diethyl‐tellurium

4. Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4

5. Effects of heavy impurity doping on electron injection in p+‐n GaAs diodes

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1. 1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells;ACS Applied Optical Materials;2024-04-10

2. Novel valence regulation-vacuum gasification method for separation of selenium and tellurium;Vacuum;2024-01

3. Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration;International Journal of Extreme Manufacturing;2023-07-25

4. Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants;AIP Advances;2023-04-01

5. Novel Valence-Regulated Vacuum Gasification Method for Separation of Selenium and Tellurium;2023

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