Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351637
Reference14 articles.
1. Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source
2. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
3. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
4. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
5. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
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