1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells-Reference-Cited by-同舟云学术

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1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells

Published:2024-04-10 Issue:4 Volume:2 Page:624-631
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Madarang May Angelu¹²^ORCID,Chu Rafael Jumar¹²^ORCID,Kim Yeonhwa¹³,Ju Eunkyo¹³,Laryn Tsimafei¹²,Lung Quang Nhat Dang¹,Han Jae-Hoon¹^ORCID,Choi Won Jun¹,Jung Daehwan¹²^ORCID

Affiliation:

1. Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. Division of Nanoscience and Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea

3. Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.4c00035

Reference47 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

3. Ge rich Esaki diodes with high peak to valley current ratios

4. Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

5. Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants

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