Te doping of GaAs using diethyl‐tellurium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357660
Reference11 articles.
1. Comparison of Si δ-doping with homogeneous doping in GaAs
2. Te and Ge — doping studies in Ga1−xAlxAs
3. Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy
4. Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs
5. Surface stoichiometry and structure of GaAs
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