Donor activation and damage in Si–SiO2from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs-Reference-Cited by-同舟云学术

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Donor activation and damage in Si–SiO2from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs

Published:2005-03-01 Issue:5 Volume:20 Page:363-368
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

McCamey D R,Francis M,McCallum J C,Hamilton A R,Greentree A D,Clark R G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Shallow junction doping technologies for ULSI

2. Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices

3. A silicon-based nuclear spin quantum computer

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1. Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon;Advanced Materials;2024-08-29

2. Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million;ACS Applied Materials & Interfaces;2023-05-11

3. A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder;Nano Letters;2021-11-22

4. Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions;Advanced Materials;2021-11-12

5. Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology;Advanced Functional Materials;2019-01-23

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