Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics-Reference-Cited by-同舟云学术

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Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Published:2016-04-26 Issue:6 Volume:31 Page:065011
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Blaho M,Gregušová D,Haščík Š,Seifertová A,Ťapajna M,Šoltýs J,Šatka A,Nagy L,Chvála A,Marek J,Carlin J-F,Grandjean N,Konstantinidis G,Kuzmík J

Funder

Competence center for new materials, advanced technologies and energy

Vedecká Grantová Agentúra MŠVVaŠ SR a SAV

Slovak Research and Development Agency

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=6/a=065011/pdf

Reference9 articles.

1. High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

2. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

3. Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors

4. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

5. A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normally Off WSe₂ Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping;ACS Applied Nano Materials;2022-11-17

2. AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers;Crystals;2021-11-22

3. Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs;Applied Surface Science;2020-10

4. Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT;2020 IEEE Calcutta Conference (CALCON);2020-02

5. Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs;Journal of Circuits, Systems and Computers;2019-12-01

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