Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT-Reference-Cited by-同舟云学术

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Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT

Published:2020-02 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Calcutta Conference (CALCON)
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Author:

Kumar Shubham,Ali Minnat,Kumar Raushan,Mitra Rajrup,Kundu Atanu,Kar Mousiki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9104468/9106416/09106543.pdf?arnumber=9106543

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Buffer Length and Mole Fraction on Analog Performances of a Symmetrical Underlapped DG Si/SiGe-based MOS-HEMT Device;2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC);2024-01-25

2. Multigate MOS-HEMT;HEMT Technology and Applications;2022-06-24

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