Experimental evidence for complementary spatial sensitivities of capacitance and charge deep-level transient spectroscopies-Reference-Cited by-同舟云学术

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Experimental evidence for complementary spatial sensitivities of capacitance and charge deep-level transient spectroscopies

Published:2000-03-08 Issue:4 Volume:15 Page:378-385
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Thurzo I,Beyer R,Zahn D R T

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Band gap states of V and Cr in 6H-silicon carbide

2. Band gap states of Ti, V, and Cr in 4H–silicon carbide

3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

4. Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS)

5. Charge transient spectroscopy

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1. Shallow carrier traps in hydrothermal ZnO crystals;New Journal of Physics;2014-08-26

2. A Q-DLTS investigation of aluminum nitride surface termination;Journal of Materials Research;2012-03-13

3. An Aluminum Nitride-based chemical sensor using Q-DLTS;Diamond and Related Materials;2012-03

4. Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations;physica status solidi (a);2008-03

5. Charge deep-level transient spectroscopy of Al/intrinsic diamond/p+-Si Schottky diodes;Semiconductor Science and Technology;2001-05-16

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