An Aluminum Nitride-based chemical sensor using Q-DLTS-Reference-Cited by-同舟云学术

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An Aluminum Nitride-based chemical sensor using Q-DLTS

Published:2012-03 Issue: Volume:23 Page:72-75
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Rothenberger J.B.,Montenegro D.E.,Prelas M.A.,Ghosh T.K.,Tompson R.V.,Loyalka S.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Encyclopedia of Chemical Processing;Prelas,2005

2. GaN, AlN, and InN: A review

3. The Curators of the University of Missouri, United States;Prelas,2007

4. 2004 AIChE Spring National Meeting, New Orleans, LA;Prelas,2004

5. Properties and Proceedings of Vapor-Deposited Coatings;Polyakov,1998

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship between Annealing and V/III Ratios during MNVPE of AlN Films;Crystal Growth & Design;2024-03-21

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