A Q-DLTS investigation of aluminum nitride surface termination-Reference-Cited by-同舟云学术

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A Q-DLTS investigation of aluminum nitride surface termination

Published:2012-03-13 Issue:8 Volume:27 Page:1198-1204
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Rothenberger Jason B.,Montenegro Daniel E.,Prelas Mark A.,Ghosh Tushar K.,Tompson Robert V.,Loyalka Sudarshan K.

Abstract

Abstract

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. The mechanism of persistent photoconductivity induced by minority carrier trapping effect in ultraviolet photo-detector made of polycrystalline diamond film

2. Identification of the deep-level defects in AlN single crystals: EPR and TL studies

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