Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, International Islamic University, Islamabad, Pakistan
2. Center for Advanced Electronics and Photovoltaic Engineering, International Islamic University, Islamabad, Pakistan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/10225446/10229496.pdf?arnumber=10229496
Reference46 articles.
1. Defects anomaly in cobalt-doped ZnO nanostructures using optical and charge transient analysis
2. Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si
3. Photo electrical and optical anomaly in ferromagnetic cobalt doped ZnO nanostructures
4. Phosphorus doping of ZnO using spin‐on dopant process: A better choice than costly and destructive ion-implantation technique
5. Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review
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