Band gap states of Ti, V, and Cr in 4H–silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119485
Reference13 articles.
1. Point defects in silicon carbide
2. On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium
3. Possible lifetime‐limiting defect in 6H SiC
4. Semi‐insulating 6H–SiC grown by physical vapor transport
5. Formation of semi‐insulating 6H‐SiC layers by vanadium ion implantations
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2. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation;IEEE Electron Device Letters;2023-04
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4. Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements;Chinese Physics B;2021-08-25
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