On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359899
Reference16 articles.
1. RF performance of SiC MESFET's on high resistivity substrates
2. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
3. On the electronic conduction of α-SiC crystals between 300 and 1500°K
4. Electrical and optical characterization of SiC
5. Large diameter 6H-SiC for microwave device applications
Cited by 69 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions;Quantum Science and Technology;2024-05-22
2. Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates;Journal of Electronic Materials;2024-03-06
3. Investigation of Reflection Anisotropy Induced by Micropipe Defects on the Surface of 4H-SiC Single Crystal Using Scanning Anisotropy Microscopy;Chinese Physics B;2023-08-22
4. Breakdown behavior of SiC photoconductive switch with transparent electrode;AIP Advances;2022-08-01
5. Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review;International Journal of Applied Ceramic Technology;2022-02-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3