Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations-Reference-Cited by-同舟云学术

Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations

Published:2008-03 Issue:3 Volume:205 Page:591-599
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Scholz R.,Lehmann D.,Müller A.-D.,Müller F.,Zahn D. R. T.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. N. Karl, Organic Semiconductors, in: Landolt-Börnstein (New Series), Group III, Vol. 17i (Springer, Berlin, 1985), pp. 106-218.

2. Field-effect transistors on rubrene single crystals with parylene gate insulator

3. Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

4. Space charge limited transport and time of flight measurements in tetracene single crystals: A comparative study

5. Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

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