Flexible InGaZnO TFT devices obtained via humid-UV irradiation with an aqueous-fluoroalcoholic precursor
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/2058-8585/1/4/045001/pdf
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2. Flexible Metal Oxide Semiconductor Devices Made by Solution Methods;Chemistry – A European Journal;2020-06-05
3. Effects of metal content on electrical and physical properties in solution-processed IGZO thin films;Applied Physics A;2020-05
4. Recent Progress in Photonic Processing of Metal‐Oxide Transistors;Advanced Functional Materials;2019-10-22
5. Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films;AIP Advances;2018-11
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