Recent Progress in Photonic Processing of Metal‐Oxide Transistors-Reference-Cited by-同舟云学术

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Published:2019-10-22 Issue:20 Volume:30 Page:1906022
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yarali Emre¹,Koutsiaki Christina²,Faber Hendrik¹,Tetzner Kornelius³,Yengel Emre¹,Patsalas Panos⁴,Kalfagiannis Nikolaos²,Koutsogeorgis Demosthenes C.²,Anthopoulos Thomas D.¹^ORCID

Affiliation:

1. King Abdullah University of Science and Technology (KAUST)KAUST Solar Center (KSC) Thuwal 23955 Saudi Arabia

2. School of Science and TechnologyNottingham Trent University NG11 8NS Nottingham UK

3. Ferdinand‐Braun‐InstitutLeibniz‐Institut für Höchstfrequenztechnik Gustav‐Kirchhoff‐Straße 4 12489 Berlin Germany

4. Department of PhysicsAristotle University of Thessaloniki GR‐54124 Thessaloniki Greece

Funder

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201906022

Reference248 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Review of solution-processed oxide thin-film transistors

3. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

4. A review on the recent developments of solution processes for oxide thin film transistors

5. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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