Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films-Reference-Cited by-同舟云学术

Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films

Published:2018-11 Issue:11 Volume:8 Page:115304
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Takamori Yuki¹²,Morimoto Takaaki¹²,Fukuda Nobuko²^ORCID,Ohki Yoshimichi¹³^ORCID

Affiliation:

1. Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo 169-8555, Japan

2. Flexible Electronics Research Center (FLEC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8565, Japan

3. Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049618

Reference67 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Material characteristics and applications of transparent amorphous oxide semiconductors

5. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

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1. Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content;Solid-State Electronics;2023-02

2. Electrical Instabilities in Amorphous Si-Zn-Sn-O Thin Film Transistors Under Ultra-Violet Irradiation Depending on Oxygen Content;SSRN Electronic Journal;2022

3. Effects of metal content on electrical and physical properties in solution-processed IGZO thin films;Applied Physics A;2020-05

4. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics;Advanced Functional Materials;2019-09-06