Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference45 articles.
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3. Oxygen vacancy controlled SiZnSnO thin-film inverters with high gain;Byun;Phys Status Solidi A,2020
4. Engineering of bandgap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration;Choi;Sci Rep,2016
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1. Enhanced Stability of SiZTO TFT Under Positive Voltage and Light Negative Voltage Stress and Modified Hysteresis of the CNTs/SiZTO CMOS Inverter by Si Doping;IEEE Transactions on Electron Devices;2023-08
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