Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocations-Reference-Cited by-同舟云学术

Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocations

Published:2002-11-22 Issue:48 Volume:14 Page:13079-13086
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Vyvenko O F,Buonassisi T,Istratov A A,Weber E R,Kittler M,Seifert W

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/14/i=48/a=353/pdf

Reference14 articles.

1. Iron contamination in silicon technology

2. Electrical properties and recombination activity of copper, nickel and cobalt in silicon

3. Structural and Electrical Properties of NiSi₂ Particles in Silicon

4. Electrical and structural properties of nanoscaleNiSi2precipitates in silicon

5. Electrical and Recombination Properties of Copper‐Silicide Precipitates in Silicon

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