Electrical and Recombination Properties of Copper‐Silicide Precipitates in Silicon-Reference-Cited by-同舟云学术

Electrical and Recombination Properties of Copper‐Silicide Precipitates in Silicon

Published:1998-11-01 Issue:11 Volume:145 Page:3889-3898
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Istratov A. A.¹²,Hedemann H.³,Seibt M.³,Vyvenko O. F.³²,Schröter W.³,Heiser T.¹,Flink C.¹,Hieslmair H.¹,Weber E. R.¹

Affiliation:

1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720‐1760

2. Institute of Physics, St. Petersburg State University, St. Petersburg 198904, Russia

3. IV. Physical Institute, University of Göttingen, Göttingen D‐37073, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838889/pdf

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