Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals-Reference-Cited by-同舟云学术

Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals

Published:2016-10-03 Issue:14 Volume:109 Page:142105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohno Yutaka¹^ORCID,Kutsukake Kentaro¹,Deura Momoko¹^ORCID,Yonenaga Ichiro¹,Shimizu Yasuo²^ORCID,Ebisawa Naoki²,Inoue Koji²,Nagai Yasuyoshi²,Yoshida Hideto³,Takeda Seiji³

Affiliation:

1. Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

2. The Oarai Center, IMR, Tohoku University, Oarai, Ibaraki 311-1313, Japan

3. The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4964440

Reference43 articles.

1. Engineering metal-impurity nanodefects for low-cost solar cells

2. Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells

3. Iron point defect reduction in multicrystalline silicon solar cells

4. Chemical natures and distributions of metal impurities in multicrystalline silicon materials

5. Impact of stress on the recombination at metal precipitates in silicon

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