The resistivity and Hall coefficient of CoGe and CoGe2thin films
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/2/i=14/a=016/pdf
Reference19 articles.
1. Hall Coefficients of Cu, Ag, and Au in the Range 4.2-300°K
2. Observations on the hexagonal form of MoSi2and WSi2films produced by ion implantation and on related snowplow effects
3. Resistivity of the solid solutions (Co‐Ni)Si2
4. Resistivity and the Hall effect for thin MnSi1.73films
5. Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions
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1. Interpretation of photoelectron spectra of CoGen− (n = 4, 5) clusters by multiconfigurational RASPT2 calculations;Journal of Molecular Modeling;2021-04-23
2. Co–Ge compounds and their electrochemical performance as high-performance Li-ion battery anodes;Materials Today Energy;2020-12
3. Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties;Journal of Materials Science: Materials in Electronics;2019-05-18
4. The Electronic Structures of CoGen–/0 (n = 1–3) Clusters from Multiconfigurational CASSCF/CASPT2 and RASSCF/RASPT2 Calculations;The Journal of Physical Chemistry A;2018-07-12
5. First phase to form during cobalt germanidation;Journal of Applied Physics;2017-04-14
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