Resistivity of the solid solutions (Co‐Ni)Si2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336858
Reference27 articles.
1. Reaction of silicon with films of CoNi alloys: Phase separation of the monosilicides and nucleation of the disilicides
2. Epitaxial silicides
3. The effects of nucleation and growth on epitaxy in the CoSi2/Si system
4. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
5. Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
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1. Formation of (CoxNi1−x)Si2 ternary silicide by thermal annealing of evaporated Co/Ni thin films on Si substrate;Vacuum;2015-07
2. Formation of epitaxial Co1−xNixSi2 nanowires on thin-oxide-capped (001)Si;Journal of Applied Physics;2013-02-28
3. Extensive Raman spectroscopic investigation of ultrathin Co1−xNixSi2 films grown on Si(100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-07
4. Structure and property of magnetron sputtered ternary cobalt–nickel silicide films;Microelectronic Engineering;2010-10
5. Formation and stability of NiSi in the presence of Co and Fe alloying elements;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008-11
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