Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/20/i=4/a=045208/pdf
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1. Distinguishing the inverse spin Hall effect photocurrent of electrons and holes by comparing to the classical Hall effect;Optics Express;2020-03-06
2. Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures;Journal of Applied Physics;2013-08-07
3. InN and ln1−XGaX N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings;Materials Science in Semiconductor Processing;2012-08
4. Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures;Journal of Applied Physics;2011-12
5. Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method;Journal of Applied Physics;2010-07
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