Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/aae6db/pdf
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1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Electrochemical metallization memories—fundamentals, applications, prospects
3. Conductive bridging random access memory—materials, devices and applications
4. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
5. A Polymer-Electrolyte-Based Atomic Switch
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