Low-Temperature Fabrication of Mesoporous SiO<sub>2</sub> CBRAM Memory Cells on Flexible Substrates-Reference-Cited by-同舟云学术

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Low-Temperature Fabrication of Mesoporous SiO₂ CBRAM Memory Cells on Flexible Substrates

Published:2024-06-30 Issue: Volume: Page:1-4
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Container-title:2024 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
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Author:

Mamberti Roxane¹,Benevent Evangéline¹,Bocquet Marc¹,Postel-Pellerin Jérémy¹,Grosso David²,Djaou Cédric¹,Putero Magali¹

Affiliation:

1. Aix Marseille Univ, CNRS, IM2NP,Marseille,France

2. Aix Marseille Univ, CNRS, CINAM,Marseille,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10603449/10603462/10603592.pdf?arnumber=10603592

Reference30 articles.

1. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

2. Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS₂/TiO₂ Bilayer

3. Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

4. 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing

5. Flexible Parylene C-Based RRAM Array for Neuromorphic Applications

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