Towards Printed Conductive-Bridge Memory Devices Based on Mesoporous SiO<sub>2</sub> Film-Reference-Cited by-同舟云学术

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Towards Printed Conductive-Bridge Memory Devices Based on Mesoporous SiO₂ Film

Published:2023-07-09 Issue: Volume: Page:
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Container-title:2023 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
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Author:

Mamberti Roxane¹,Benevent Evangeline¹,Bocquet Marc¹,Grosso David¹,Fiorido Tomas¹,Putero Magali¹

Affiliation:

1. Magali PUTERO Aix Marseille Univ, CNRS, IM2NP,Marseille,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10220342/10220218/10220375.pdf?arnumber=10220375

Reference38 articles.

1. Electrochemical metallization memories—fundamentals, applications, prospects

2. Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

3. Bistable switching in electroformed metal–insulator–metal devices

4. Observation of conducting filament growth in nanoscale resistive memories

5. ReRAM: History, Status, and Future

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Fabrication of Mesoporous SiO₂ CBRAM Memory Cells on Flexible Substrates;2024 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS);2024-06-30

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