Forming-Free, Self-Compliance WTe2-Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore
Funder
Singapore Ministry of Education
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10027614/09997563.pdf?arnumber=9997563
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5. Ultrahigh drive current and large selectivity in GeS selector
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