Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer-Reference-Cited by-同舟云学术

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Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer

Published:2019-01-10 Issue:9 Volume:30 Page:095202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Pan Yu^ORCID,Jia Kunpeng,Huang Kailiang,Wu Zhenhua^ORCID,Bai Guobin,Yu Jiahan,Zhang Zhaohao,Zhang Qingzhu,Yin Huaxiang

Funder

The National Key Research and Development Program of China

National Natural Science Foundation of China

Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aaf956/pdf

Reference43 articles.

1. A Dual-Band Multilayer InSe Self-Powered Photodetector with High Performance Induced by Surface Plasmon Resonance and Asymmetric Schottky Junction

2. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

3. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

4. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

5. 2D layered materials: From materials properties to device applications

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