LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends

Abstract

The last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking of 2D channels made by leading semiconductor companies. However, the industry is focused solely on transition metal dichalcogenide (TMD) channels coupled with conventional 3D oxide insulators such as Al2O3 and HfO2. This has resulted in numerous challenges, such as poor-quality interfaces and reliability limitations due to oxide traps. At the same time, the alternative routes for 2D FETs offered by laboratory (LAB) research have not been appreciated until now, even though the use of the native oxides of 2D channels has recently resulted in the first 2D FinFETs. Considering the research progress achieved in the last decade, from this perspective, we will discuss the main challenges for industry integration of 2D FETs and also suggest possible future steps which could propel these emerging technologies towards market applications.