Silver/(sub-10 nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism
Author:
Funder
UAE Space Agency
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
https://iopscience.iop.org/article/10.1088/1361-6528/ab68fb/pdf
Reference40 articles.
1. Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory
2. Electrode dependence of filament formation in HfO2 resistive-switching memory
3. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
4. Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion
5. Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. HfO₂-Based Memristors for Gamma-Ray Detection: An Experimental and Computational Investigation;IEEE Sensors Journal;2024-02-01
2. Anodic HfO2 crossbar arrays for hydroxide-based memristive sensing in liquids;Journal of Electrochemical Science and Engineering;2023-04-10
3. Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode;Materials Science and Engineering: B;2021-09
4. Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges;Semiconductor Science and Technology;2021-08-03
5. Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices;Journal of Electronic Materials;2021-05-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3