Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory-Reference-Cited by-同舟云学术

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Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

Published:2008-04-07 Issue:14 Volume:92 Page:142911
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Heng Yuan,Chen Pang Shiu,Wu Tai Yuan,Wang Ching Chiun,Tzeng Pei Jer,Lin Cha Hsin,Chen Frederick,Tsai Ming-Jinn,Lien Chenhsin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2908928

Reference15 articles.

1. Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

2. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

3. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

4. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

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