Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices-Reference-Cited by-同舟云学术

Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices

Published:2020-12-14 Issue:24 Volume:117 Page:243502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhou Ziliang¹,Yang Mei¹^ORCID,Fu Zhen¹,Wang Hong¹,Ma Xiaohua²,Gao Haixia²^ORCID

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

2. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China

Funder

National Natural Science Foundation of China

National Natural Science Foundation of Shaanxi, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0020501

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2. Quantized conductance atomic switch

3. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

4. Electronic system with memristive synapses for pattern recognition

5. Identification of a determining parameter for resistive switching of TiO2 thin films

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