An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation-Reference-Cited by-同舟云学术

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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Published:2011-08 Issue:8 Volume:58 Page:2729-2737
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yu Shimeng,Wu Yi,Jeyasingh Rakesh,Kuzum Duygu,Wong H.-S. Philip

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5959271/05872020.pdf?arnumber=5872020

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