Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749846
Reference11 articles.
1. Identification of a determining parameter for resistive switching of TiO2 thin films
2. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
3. Study on the resistive switching time of TiO2 thin films
4. TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
5. Bipolar resistive switching in polycrystalline TiO2 films
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