Study on the resistive switching time of TiO2 thin films-Reference-Cited by-同舟云学术

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Study on the resistive switching time of TiO2 thin films

Published:2006-07-03 Issue:1 Volume:89 Page:012906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Byung Joon,Choi Seol,Kim Kyung Min,Shin Yong Cheol,Hwang Cheol Seong,Hwang Sung-Yeon,Cho Sung-sil,Park Sanghyun,Hong Suk-Kyoung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2219726

Reference6 articles.

1. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

2. Identification of a determining parameter for resistive switching of TiO2 thin films

3. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

4. Electrochemical Boundary Conditions for Resistance Degradation of Doped Alkaline-Earth Titanates

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