Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes-Reference-Cited by-同舟云学术

Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes

Published:2024-04-26 Issue:5 Volume:6 Page:3403-3408
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hirama Takuma¹²,Takei Masato¹²^ORCID,Motoyama Hiroyuki¹²,Ohta Masafumi¹²,Suga Hiroshi¹²^ORCID,Wakahara Takatsugu³^ORCID,Tsukagoshi Kazuhito¹²^ORCID

Affiliation:

1. Faculty of Engineering, Chiba Institute of Technology, Tsudanuma,Narashino, Chiba 275-0016, Japan

2. Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

3. Electronic Functional Macromolecules Group, Research Center for Macromolecules and Biomaterials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00219

Reference57 articles.

1. Understanding the coexistence of two bipolar resistive switching modes with opposite polarity in CuxO (1 ≤ x ≤ 2)-based two-terminal devices

2. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

3. Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiOx/ITO Resistive Switching Memories

4. Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures

5. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices