Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiOx/ITO Resistive Switching Memories-Reference-Cited by-同舟云学术

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Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiOx/ITO Resistive Switching Memories

Published:2019-12-31 Issue:4 Volume:12 Page:4579-4585
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Qian Kai¹²^ORCID,Han Xu²,Li Huakai³,Chen Tupei³,Lee Pooi See¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore

2. School of Microelectronics, Shandong University, Jinan 250100, China

3. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore

Funder

National Research Foundation Singapore

Shandong University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b16325

Reference48 articles.

1. Roll-to-Roll Green Transfer of CVD Graphene onto Plastic for a Transparent and Flexible Triboelectric Nanogenerator

2. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Transparent and Flexible Graphene Charge-Trap Memory

5. A Fully Transparent and Flexible Ultraviolet-Visible Photodetector Based on Controlled Electrospun ZnO-CdO Heterojunction Nanofiber Arrays

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1. Analog and digital resistive switching in W/TiO₂/ITO devices: the impact of crystallinity and Indium diffusion;Physica Scripta;2024-09-12

2. Efficient non-volatile memory based on SiOx thin film fabricated on transparent ITO substrate;Applied Physics A;2024-08-05

3. Studying the structure and optical properties of FeCl3: ITO prepared by sol–gel dip coating technique;Journal of Optics;2024-06-06

4. Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes;ACS Applied Electronic Materials;2024-04-26

5. Reservoir Computing Using Interfacial Memristors with Native SiO_x Nanostructures Modified by Room-Temperature Plasma Oxidation;ACS Applied Nano Materials;2024-02-19

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