Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
Author:
Affiliation:
1. Dipartimento di Elettronica, Informazione e Bioingegneria
2. Politecnico di Milano
3. 20133 Milano
4. Italy
Abstract
We compare SiOx and HfO2 ReRAM technologies with fixed C and Ti electrodes to understand the role played by the switching layer.
Funder
Horizon 2020 Framework Programme
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/FD/C8FD00106E
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