Nano-cone resistive memory for ultralow power operation-Reference-Cited by-同舟云学术

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Nano-cone resistive memory for ultralow power operation

Published:2017-02-23 Issue:12 Volume:28 Page:125207
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kim Sungjun,Jung Sunghun,Kim Min-Hwi,Kim Tae-Hyeon,Bang Suhyun,Cho Seongjae,Park Byung-Gook

Funder

National Research Foundation

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/28/i=12/a=125207/pdf

Reference48 articles.

1. Impact of floating gate dry etching on erase characteristics in NOR flash memory

2. 25nm 64Gb MLC NAND technology and scaling challenges invited paper

3. Future challenges of flash memory technologies

4. Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

5. Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM

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