CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments-Reference-Cited by-同舟云学术

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CMOS-compatible wafer-scale Si subulate array for superb switching uniformity of RRAM with localized nanofilaments

Published:2022-02-14 Issue:6 Volume:65 Page:1623-1630
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Zhang Ying,Zhao Xiaolong,Ma Xiaolan,Liu Yu,Zhou Xuanze,Zhang Meiyun,Xu Guangwei,Long Shibing

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-021-1956-9.pdf

Reference48 articles.

1. Meijer GI. Who wins the nonvolatile memory race? Science, 2008, 319: 1625–1626

2. Li Y, Long S, Liu Q, et al. Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials. Small, 2017, 13: 1604306

3. Hui F, Grustan-Gutierrez E, Long S, et al. Graphene and related materials for resistive random access memories. Adv Electron Mater, 2017, 3: 1600195

4. Waser R, Aono M. Nanoionics-based resistive switching memories. Nat Mater, 2007, 6: 833–840

5. Kim KH, Gaba S, Wheeler D, et al. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett, 2012, 12: 389–395

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