HfOx-Based Conductive Bridge Random Access Memory with Al2O3 Sandglass Nanostructures via Glancing Angle Deposition Technology toward Neuromorphic Applications-Reference-Cited by-同舟云学术

HfO_x-Based Conductive Bridge Random Access Memory with Al₂O₃ Sandglass Nanostructures via Glancing Angle Deposition Technology toward Neuromorphic Applications

Published:2023-05-18 Issue:11 Volume:6 Page:9247-9256
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Shen Ying-Chun¹²³⁴,Huang Yu-Wen⁵,Yang Tzu-Yi¹²³⁴,Yu Yi-Jen⁶,Kuo Hao-Chung⁷,Tseng Tseung-Yuen⁵^ORCID,Chueh Yu-Lun¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan

2. College of Semiconductor Research, National Tsing-Hua University, Hsinchu 30013, Taiwan

3. Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan

4. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan

5. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

6. Instrument Center, National Tsing Hua University, Hsinchu 30013, Taiwan

7. Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c00810

Reference39 articles.

1. Memory devices and applications for in-memory computing

2. Nonvolatile Memory with Multilevel Switching: A Basic Model

3. Resistance switching memories are memristors

4. Nanoionics-based resistive switching memories

5. Shimeng Yu, B. G.; Fang, Z.; Yu, H.; Kang, J.; Philip Wong, H.S. In A Neuromorphic Visual System Using RRAM Synaptic Devices with Sub-pJ Energy and Tolerance to Variability: Experimental Characterization and Large-Scale Modeling, 2012 International Electron Devices Meeting; IEEE: San Francisco, CA, USA, 2012; pp 10.4.1–10.4.4.

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