Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM-Reference-Cited by-同舟云学术

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Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM

Published:2005-11 Issue:11 Volume:49 Page:1767-1775
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Gerritsen Eric,Emonet Nicolas,Caillat Christian,Jourdan Nicolas,Piazza Marc,Fraboulet David,Boeck Bruce,Berthelot Audrey,Smith Steven,Mazoyer Pascale

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Integration of capacitor for sub-100-nm DRAM trench technology;Lützen;VLSI Tech Dig,2002

2. Trends in megabit DRAMs;Sunami;VLSI Tech Dig,1985

3. Novel high density, stacked capacitor MOS RAM;Koyanagi;IEDM Tech Dig,1978

4. A 1-Mb DRAM with 3-dimensional stacked capacitor cells;Takemae;ISSCC Tech Dig,1985

5. A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64Mb DRAMs;Sakao;IEDM Tech Dig,1990

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